Investigation of oval defects in (In)Ga(Al)As/GaAs heterostructures by spatially resolved photoluminescence and micro-cathodoluminescence
作者： Anna Szerling , Kamil Kosiel , Anna Wójcik-Jedlińska , Mariusz Płuska , Maciej Bugajski
DOI: 10.1016/J.MSSP.2006.01.071
关键词: Materials science 、 Gallium 、 Heterojunction 、 Microstructure 、 Photoluminescence 、 Epitaxy 、 Cathodoluminescence 、 Molecular beam epitaxy 、 Optoelectronics 、 Scanning electron microscope 、 Analytical chemistry 、 Mechanical engineering 、 General Materials Science 、 Mechanics of Materials 、 Condensed matter physics
摘要: Oval defects, which are commonly found in epitaxial (In)Ga(Al)As heterostructures grown by molecular beam epitaxy (MBE) technique, studied this paper. The investigations of the morphology as well optical properties defects were performed scanning electron microscopy (SEM), cathodoluminescence (CL) and spatially resolved photoluminescence (SRPL). conclusions drawn to sources conditions their appearance possible internal structure.
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