Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
作者： J. J. Russell-Harriott , J. Zou , A. R. Moon , D. J. H. Cockayne , B. F. Usher
DOI: 10.1063/1.122929
关键词:
摘要: Oval defects in In0.04Ga0.96As/GaAs strained-layer heterostructures have been investigated using cathodoluminescence (CL) and wavelength dispersive x-ray spectroscopy (WDS). WDS studies showed that the particulates seen at center of oval are indium rich gallium depleted. A luminescent halo was around CL mode. When studied further, it shown peak obtained from due to shifts lower wavelengths as beam is moved defect edge region, indicating a decreasing gradient concentration.
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C.E.C. Wood, L. Rathbun, H. Ohno, D. DeSimone, On the origin and elimination of macroscopic defects in MBE films Journal of Crystal Growth. ,vol. 51, pp. 299- 303 ,(1981) , 10.1016/0022-0248(81)90314-6
M. Bafleur, A. Munoz-Yague, A. Rocher, Microtwinning and growth defects in GaAs MBE layers Journal of Crystal Growth. ,vol. 59, pp. 531- 538 ,(1982) , 10.1016/0022-0248(82)90374-8
Shang‐Lin Weng, C. Webb, Y. G. Chai, S. G. Bandy, Particulates: An origin of GaAs oval defects grown by molecular beam epitaxy Applied Physics Letters. ,vol. 47, pp. 391- 393 ,(1985) , 10.1063/1.96177
K. Rammohan, H. T. Lin, D. H. Rich, A. Larsson, Influence of misfit dislocations on thermal quenching of luminescence in InxGa1−xAs/GaAs multiple quantum wells Journal of Applied Physics. ,vol. 78, pp. 6687- 6690 ,(1995) , 10.1063/1.360491
Shang-Lin Weng, Ga2O3 and particulates: The origins of oval defects in GaAs-related molecular-beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 5, pp. 725- 729 ,(1987) , 10.1116/1.583772
J. Zou, D.J.H. Cockayne, J.J. Russell-Harriott, A.R. Moon, Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy Micron. ,vol. 28, pp. 309- 312 ,(1997) , 10.1016/S0968-4328(97)00027-9
K. Fujiwara, K. Kanamoto, Y.N. Ohta, Y. Tokuda, T. Nakayama, Classification and origins of GaAs oval defects grown by molecular beam epitaxy Journal of Crystal Growth. ,vol. 80, pp. 104- 112 ,(1987) , 10.1016/0022-0248(87)90529-X
Sajal Paul, J. B. Roy, P. K. Basu, Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1-xAs Journal of Applied Physics. ,vol. 69, pp. 827- 829 ,(1991) , 10.1063/1.348919
J. Zou, D. J. H. Cockayne, J. J. Russell-Harriott, Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy Applied Physics Letters. ,vol. 70, pp. 3134- 3136 ,(1997) , 10.1063/1.119112
Young G. Chai, Robert Chow, Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy Applied Physics Letters. ,vol. 38, pp. 796- 798 ,(1981) , 10.1063/1.92167