Ga2O3 and particulates: The origins of oval defects in GaAs-related molecular-beam epitaxy

摘要: Based on micrographic evidence, thermodynamic data, and quantitative analysis, we show that the predominant origins of oval defects in GaAs‐related molecular‐beam epitaxy are particulates wafer surface Ga2O3 Ga melt. Both sources can be traced to contamination preparation environment melt used, respectively. Substrate also found induce formation under improper growth conditions. We propose a mechanism, which explains how lead epilayer surface.