Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
作者： J. Zou , D.J.H. Cockayne , J.J. Russell-Harriott , A.R. Moon
DOI: 10.1016/S0968-4328(97)00027-9
关键词: Dislocation 、 Heterojunction 、 Condensed matter physics 、 Threading dislocations 、 Molecular beam epitaxy 、 Crystallography 、 Layer (electronics) 、 X-ray absorption spectroscopy 、 Materials science
摘要: Abstract Inhomogeneous sources of misfit dislocation generation have been observed in In xGa1−xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy. These identified as oval defects. The observations show that (1) the critical thicknesses dislocations generated from these inhomogeneous are same those pre-existing threading dislocations, and (2) each source may generate a number dislocations. suggest premium generation.
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