Misfit dislocations in modulation-doped In0.2Ga0.8As/GaAs strained multilayer structures
作者： J. Wang , J. W. Steeds , D. I. Westwood
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摘要: Transmission electron microscopy was used to investigate modulation-doped InGaAs/GaAs strained multilayer structures with In composition of about 20%. Occasional inhomogeneities were observed which acted as sources misfit dislocations. It found that higher in these caused three-dimensional growth and modulation for thicker InGaAs layers. The densities dislocations generally increased comparison undoped structure by doping. degree density increase depended on the details doping introduced.
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