Influence of misfit dislocations on thermal quenching of luminescence in InxGa1−xAs/GaAs multiple quantum wells
作者： K. Rammohan , H. T. Lin , D. H. Rich , A. Larsson
DOI: 10.1063/1.360491
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摘要: The temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. CL intensity exhibits an Arrenhius‐type on (T), characterized by two different activation energies. influence misfit dislocations point defects associated with strain relaxation thermal quenching luminescence investigated, spatial variation in energies examined. for T≲150 K is controlled thermally activated nonradiative recombination. For T≳150 decrease largely influenced re‐emission carriers out wells.
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