Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures

作者: Mohanchand Paladugu , Jin Zou , Ya-Nan Guo , Graeme J. Auchterlonie , Hannah J. Joyce

DOI: 10.1002/SMLL.200700222

关键词: WettingEpitaxyHeterojunctionNanowireMetalorganic vapour phase epitaxyCondensed matter physicsMaterials scienceTransmission electron microscopySemiconductorCrystal growth

摘要: Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important applications optoelectronics. The physical phenomena, which resulted the failure of axial InAs growth on GaAs nanowires, demonstrated. vapor-liquid-solid (VPS) method used for heterostructures. changes directions nanowires were studied by Transmission electron microscopy (TEM), lead to nanowires. catalyst gold. TEM investigations determined that initial clustering at edge an Au/GaAs interface results Au particles are unbalanced with surface and wetting between sidewalls downward InAs, sections epitaxial relationship sections.

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