Growth of straight InAs-on-GaAs nanowire heterostructures
作者： Maria E. Messing , Jennifer Wong-Leung , Zeila Zanolli , Hannah J. Joyce , H. Hoe Tan
DOI: 10.1021/NL202051W
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摘要: One of the main motivations for great interest in semiconductor nanowires is possibility easily growing advanced heterostructures that might be difficult or even impossible to achieve thin films. For III-V nanowires, axial with an interchange group III element typically grow straight only one interface direction. In case InAs-GaAs heterostructures, nanowire growth has been demonstrated GaAs on top InAs, but so far never other this article, we demonstrate InAs GaAs. The heterostructure sharp and observe a dependence parameters closely related crystal structure as well diameter growth. results are discussed by means accurate first principles calculations interfacial energies. addition, role gold seed particle, effect its composition at different stages during growth, size relation observed.
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