Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications
作者： C P T Svensson , W Seifert , M W Larsson , L R Wallenberg , J Stangl
DOI: 10.1088/0957-4484/16/6/052
关键词: Epitaxy 、 Nanowire 、 Optoelectronics 、 Materials science 、 Photoluminescence 、 Fluorescence 、 Luminescence 、 Double heterostructure 、 Wavelength 、 Diffraction
摘要: We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during the GaAs1-xPx segment, we are able control composition making it feasible tune wavelength emitted light. A system was employed characterize luminescence, x-ray energy dispersive spectrometry diffraction studies were used investigate segment. These could in future be optoelectronic devices as multi pie-wavelength fluorescent markers for biomedical applications.
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