Single-electron transistors in heterostructure nanowires.
作者： Claes Thelander , Thomas Mårtensson , MT Björk , BJ Ohlsson , MW Larsson
DOI: 10.1063/1.1606889
关键词: Nanowire 、 Single electron 、 Coulomb blockade 、 Condensed matter physics 、 Semiconductor 、 Electrical measurements 、 Materials science 、 Transistor 、 Heterojunction 、 Voltage
摘要: Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe charging energy 4 meV for the approximately 55 nm diameter and 100 long islands between barriers. The Coulomb blockade can be periodically lifted as function gate voltage all devices, which is typical signature single-island transistors. Homogeneous nanowires show no such effect corresponding ranges.
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