Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal Quality
作者： Martin Ek , B. Mattias Borg , Anil W. Dey , Bahram Ganjipour , Claes Thelander
DOI: 10.1021/CG200829Q
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摘要: Switching of the group-III element in III–V nanowire heterostructures is difficult due to high solubility atoms Au seed particle. In addition, switching from Sb a different group-V has not been achieved binary materials, largely its Au. metal–organic vapor phase epitaxy (MOVPE) growth, use precursors presents further complications reactor background contamination. this paper, we demonstrate growth GaSb/InAs(Sb) with potential applications tunneling devices and study processes occurring during transition GaSb InAs growth. We show how heterostructure can be grown sharp by taking advantage stop, which occurs naturally as particle emptied Ga filled In. The remaining results finite incorporation into segment. This suppressing stackin...
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