Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires

作者： Trevor E. Clark , Pramod Nimmatoori , Kok-Keong Lew , Ling Pan , Joan M. Redwing

关键词: Silanes 、 Silane 、 Nanowire 、 Heterojunction 、 Thin film 、 Nanotechnology 、 Germane 、 Optoelectronics 、 Materials science 、 Vapor–liquid–solid method 、 Silicon

摘要: … application or removal of the GeH 4 . The hNWs … GeH 4 partial pressure of 24 mTorr. These partial pressures yield a gas-phase Ge molar fraction (Ge/(Si + Ge)) of 4 atom % during GeH …