Modified tungsten-plug contact process

摘要: An method for the fabrication of an ohmic, low resistance contact to heavily doped silicon is described using a CVD deposited tungsten plug provided with Ti/TiN barrier metallurgy. The provides surface planarization borophosphosilicate glass insulator on silicon. After flowed planarize its surface, holes are patterned in and exposed substrate contacts implanted. Instead activating implant rapid-thermal-anneal at this point metallurgy applied first followed by anneal. This support upper corners opening during anneal thus prevents them from deforming encroaching into hole opening. By glass, higher annealing temperatures permitted, providing not only adequate dopant activation but also lower improved bonding silicate glass.