MOS device with a high voltage isolation structure
作者： Fu-Hsin Chen , Kuo-Ting Lee , You-Kuo Wu , An-Ming Chiang
DOI:
关键词: Polarity (physics) 、 Layer (electronics) 、 Analytical chemistry 、 Materials science 、 Optoelectronics 、 Semiconductor structure 、 Epitaxy 、 Voltage
摘要: The present invention discloses a semiconductor structure. A buried layer of first polarity type is constructed on substrate. epitaxial second formed the layer. An isolation structure between and layers well third wells, interfaces with well, thereby substantially blocking leakage current path wells.
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