High voltage MOS transistor with up-retro well
作者： Francois Hebert
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摘要: A high voltage MOS transistor is provided that compatible with low-voltage, sub-micron CMOS and BiCMOS processes. The of the present invention has dopants are implanted into substrate prior to formation epitaxial layer. diffuse layer from during subsequent heating steps. increase doping concentration in a lower portion may father than buried forming an up-retro well prevents vertical punch-through at operating voltages for thin layers. In addition, below gate be light so threshold low. Also, isolated layer, have symmetrical source drain regions it can used as pass transistor.
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