Method and apparatus for erasing an array of electrically erasable EPROM cells
作者： Raminda Madurawe
DOI:
关键词: Computer hardware 、 Electrical engineering 、 Node (circuits) 、 Line (text file) 、 Transistor 、 EPROM 、 Erasure 、 Computer science 、 Column (database) 、 Sense amplifier
摘要: A method and apparatus for erasing an array of electrically erasable EPROM cells that avoids overerasure allows programming or erasure individual are provided. An erase line each column the applies potential to node cell in column, provided is connected by a transistor controlled row select line. sense amplifier determines when begins conduct disconnects from its By selecting particular row, then applying only selected lines, pattern erased programmed can be created row. The differs depending on which lines have applied selected. Bias differences between read modes assure cells, gone slightly into depletion, not depletion normal operation.
lens.org 参考文章(14)
Andrew C. Tickle, Electrically erasable programmable read-only memory ,(1981)
Andrew C. Tickle, Bit erasable electrically erasable programmable read only memory ,(1983)
Eliyahou Harari, Highly compact EPROM and flash EEPROM devices ,(1991)
Simon M. Tam, Winston K. M. Lee, Duane H. Oto, Self-limiting erase scheme for EEPROM ,(1987)
Richard T. Simko, Triple layer polysilicon cell ,(1977)
Fujio Masuoka, Electrically erasable and electrically programmable read only memory ,(1988)
Masamichi Asano, Hiroshi Iwahashi, Sadayuki Yokoyama, Kaoru Nakagawa, Electrically erasable non-volatile semiconductor device ,(1989)
Harish N. Kotecha, Low voltage electrically erasable programmable read only memory ,(1980)
Tadashi Miyakawa, Masamichi Asano, Erase circuitry for a non-volatile semiconductor memory device ,(1989)
David D. Wilmoth, James L. Paterson, Bert R. Riemenschneider, Erasable programmable memory including buried diffusion source/drain lines and erase lines ,(1987)