Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase

摘要: A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling operated low voltages. Portions each the source drain regions overlap with first gate dielectric layer, interpoly layer is chosen to have a high constant so as maximize capacitive coupling ratio between floating gate, control source, drain. The logical condition cells in array set by elevating block voltage threshold individually lowering selected cells.