[NON-VOLATILE MEMORY DEVICE STRUCTURE]
作者： Lin Chun-Jung
DOI:
关键词:
摘要: A non-volatile memory device structure, having a plurality of gates, bit lines and word lines. The gates are formed in substrate. between the buried diffusion line an elevated conductor layer on line. substantially perpendicular to over across sidewall further has first spacer, while second spacer.
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