EEPROM cell on SOI

摘要: A non-volatile storage cell manufactured in a standard CMOS process silicon on insulator is described. The single polysilicon layer applied to starting substrates. Two versions of the are described with distinct mechanisms for writing onto floating node. basic comprises crossed N- and P- transistors which share common channel region gate over channel. Current results charge injection through oxide conductor where it permanently stored. Since both N P type available, polarities can be injected. Application voltage either current or used perform reading function. Multiple variations its operation also along unique applications cell.