Single-poly EEPROM cell with lightly doped MOS capacitors
作者： Thomas B. Lucking , James E Riekels , Gary R. Gardner , Bradley J. Larsen
DOI:
关键词:
摘要: An Electrically Erasable Programmable Read Only Memory (EEPROM) memory cell and a method of operation are disclosed for creating an EEPROM in standard CMOS process. A single polysilicon layer is used combination with lightly doped MOS capacitors. The capacitors employed the can be asymmetrical design. Asymmetrical reduce area. Further capacitance variation caused by inversion also reduced using multiple control In addition, use tunneling provides benefit customized paths.
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