Method and composition for reducing gate oxide damage during RF sputter clean

作者： Zhihai Wang , Wei-jen Hsia , Wilbur Catabay

DOI:

关键词: Gate oxide 、 Charge density 、 Deposition (phase transition) 、 Sputter cleaning 、 Layer (electronics) 、 Sputtering 、 Materials science 、 Electronic engineering 、 Wafer 、 Optoelectronics 、 Stress (mechanics)

摘要: Provided is a method and composition for RF sputter cleaning of contact via holes which provides substantially uniform charge distribution in the minimizes electron shadowing. This accomplished by isotropically depositing, such as PVD, layer conductive material at wafer surface surrounding hole down sides hole. Isotropic deposition that high aspect ratio trenches heaviest top minimal bottom (due to shadowing effect). The deposited preferably metal also used liner prior depositing plug material. path negative otherwise accumulating during reach thereby prevents accumulations one polarity around Thus, stress on gate oxide caused conventional sputtering, described above, relieved.