Interfacial atomic transport in the nucleation of crystalline silicon from the melt
作者： P.V. Evans , S.R. Stiffler
DOI: 10.1016/0956-7151(91)90089-J
关键词: Crystalline silicon 、 Activation energy 、 Thin film 、 Nucleation 、 Planar 、 Materials science 、 Kinetics 、 Chemical physics 、 Supercooling 、 Mineralogy 、 Atom
摘要: … K of Tin, the calculated nucleation temperature was invarient … In the present calculations, a nucleating volume of 10-13m 3 … the calculated nucleation temperature at a given quench rate. …
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