作者: J.P. Leonard , James S. Im
DOI: 10.1557/PROC-580-233
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摘要: In this paper, we present a numerical model that incorporates algorithms to simulate nucleation and growth in supercooled liquid manner properly accounts for the stochastic nature of nucleation. The basis our relies on discretization space time address thermal evolution, rapid undercooled interface, liquid. formulation permits spatially temporally random phenomenon be manifested transformation resultant microstructure. This is accomplished by (1) calculating probability each every node during step using Poisson expression, (2) triggering if only when number assigned less than calculated probability. No empirical or deterministic conditions are imposed; occurs spontaneously solely based kinetics. We demonstrate effectiveness overall analyzing similar those encountered pulsed laser-induced crystallization thin Si films, discuss generality proposed