Coaxial‐line type microwave plasma CVD system to fabricate SiN films

摘要: This paper considers the fabrication of silicon nitride films by means vapor phase deposition with a microwave glow discharge. With cavity-type coaxial line discharge tube, plasma has been confined in desired space and film fabricated successfully outside plasma. Hence, substrate is not damaged nor heated bombardment. Fabrication successful at room temperature. The rate depends on location table. When table sufficiently far away so that an almost uniform thickness obtained for 6 cm diameter, 2 to 7 A/s power 100 W. Depending conditions, optical energy gap varies from 5 eV. Then color (∼l μm) changes brown transparent. A new method proposed finding Si/N ratio density measurement infrared absorption spectrum index refraction. Based computed results, quality studied. flow SiH4 gas kept small, strong transparent can be 0.75 2.3 g/cm3. temperature increased, increased reduced. It found reduction due adsorption radicals.