Interface structure in Cu/Ta2O5/Pt resistance switch: a first-principles study.
作者： Bo Xiao , Satoshi Watanabe
DOI: 10.1021/AM5066656
关键词: Amorphous solid 、 Crystal 、 Materials science 、 Ionic conductivity 、 Ionization 、 Ion 、 Analytical chemistry 、 Layer (electronics) 、 Range (particle radiation) 、 Thermal conduction
摘要: The interface structures of a Cu/Ta2O5/Pt resistance switch under various oxidation conditions have been examined from first-principles. O-rich Cu/Ta2O5 is found to be stable within wide range O chemical potentials. In this structure, considerable number Cu atoms tend migrate the amorphous Ta2O5 (a-Ta2O5) layer, which causes formation Cu2O layer. become more ionized with an increase in concentration and/or temperature. These Cu+ ions could function as one main sources for conduction filaments Cu/a-Ta2O5/Pt switch. contrast, ionization not observed Cu/crystal-Ta2O5 primarily due much lower ionic conductivity crystal-Ta2O5 than that state. addition, Pt electrode ionized, irrespective and v...
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