Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates

摘要: A polysilicon-based floating gate is formed so as to be resistant oxidation that occurs during multiple thermo-cycles in fabrication. Accordingly, edge erase times NOR-type memory devices may minimized. Additionally, manufacture of gates reduces variations among devices. layer amorphous silicon deposited over a substrate by directing mixture silane and phosphene-helium gas at the surface substrate. Later, N+ ions are implanted into silicon. The then etched overlap slightly with regions will later correspond source drain regions. Next, lower oxide an ONO dielectric device heated. thermo-cycle eliminated heating formation rather than immediately following its deposition. nitride layers dielectric, second polysilicon layer, tungsten silicide SiON successively formed.