Method for fabricating a DRAM trench capacitor with recessed pillar
作者： Horng-Huei Tseng
DOI:
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摘要: A method, and resultant structure, is described for fabricating a DRAM trench capacitor with single pillar recessed below the level of top surface silicon substrate in which it formed. First second insulating layers are formed over substrate, patterned to form an opening substrate. portion removed region defined by opening, whereby first Sidewall spacers along sides from third layer. after depositing conductive layer between sidewall removing except within trench. The removed. that not vertically masked pillar, simultaneously removed, at greater depth remainder also dielectric pillar. conducting outside electrode.
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