Method for forming vertical channel flash memory cell and device manufactured thereby
作者： Di-Son Kuo , Jong Chen , Shui-Hung Chen , Chrong Jung Lin
DOI:
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摘要: A vertical memory device on a silicon semiconductor substrate is formed by the following steps. Form an array of isolation oxide structures surface substrate. floating gate trench in between array, having sidewall surfaces. Dope sidewalls with threshold implant through tunnel layer surfaces, outer surface. electrode layer. source/drain regions self-aligned electrode. interelectrode dielectric over top control source line step performing etch followed implant.
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