Trenched gate non-volatile semiconductor device with the source/drain regions spaced from the trench by sidewall dopings

摘要: A device structure and method for a non-volatile semiconductor comprises trenched floating gate control further includes source region, drain channel an inter-gate dielectric layer. The is formed in trench etched into the substrate. has top surface which substantially planar with of region have depth approximately equal to or greater than partially extend laterally underneath bottom trench. layer on gate, In one embodiment, also sidewall dopings that are implanted regions substrate vertically along length immediately contiguous vertical sides separate from region.