Method of manufacturing a semiconductor device comprising an insulated gate field effect device
作者： Keith M. Hutchings , Andrew L. Goodyear , Andrew M. Warwick
DOI:
关键词: Semiconductor device 、 Doping 、 Semiconductor 、 Layer (electronics) 、 Electrical conductor 、 Materials science 、 Optics 、 Masking (art) 、 Field effect 、 Rectangular potential barrier
摘要: A semiconductor body (3) has a first region (4) of one conductivity type adjacent major surface (5). masking layer (6) comprising at least mask window (6a) spaced from second (6b) is defined on the Opposite impurities are then introduced through and (8) which selectively removable with respect to subsequently provided patterned leave area (8a) covering (6a). The etched define recess (9) extending into while leaving beneath masked form relatively highly doped (7). layers (6 8) removed an insulated gate structure (10) by defining insulating (10a) walls (9a) providing conductive (10b) (10a). lowly third (11) opposite extend between (7) provide conduction channel (11a) (10). fourth (12) potential barrier (12a) so that provides path regions (12 4).
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