Electrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structure
作者： Jein-Chen Young , Manjin Jerome Kim
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摘要: A nonvolatile storage device is provided with at least one stacked poly gate structure formed on the substrate and disposed between a first trench second trench. The trenches each having two walls. doped area conductivity type extending along wall of heights greater than widths, being parallel to walls widths perpendicular thereto. are lined metal silicide decrease resistivity.
google.nl 参考文章(7)
Agerico L. Esquivel, Allan T. Mitchell, Howard L. Tigelaar, Floating gate memory cell and device ,(1990)
Yoshinori Okumura, Trench type semiconductor memory device having side wall contact ,(1988)
Agerico L. Esquivel, Allan T. Mitchell, Howard L. Tigelaar, Method of making an array device with buried interconnects ,(1990)
Sidney I. Soclof, Extremely small area npn lateral transistor ,(1987)
Peter J. Schubert, Self-aligned silicon MOS device ,(1987)
Hase Nobuyasu, Akiyama Shigenobu, Takayanagi Shigetoshi, MANUFACTURE OF MNOS TYPE SEMICONDUCTOR DEVICE ,(1981)
Yoshimitsu Okuda, Toru Okuma, Yukio Takashima, Hirobumi Fukumoto, Field-effect transistor ,(1988)