Method of forming buried diffusion junctions in conjunction with shallow-trench isolation structures in a semiconductor device

摘要: A method is provided for use in a semiconductor fabrication process to form buried diffusion junctions conjunction with shallow-trench isolation (STI) structures device. This features beak-like oxide layers formed serve as mask prior the forming of STI structures, which can prevent subsequently from being broken up during structures. Moreover, sidewall-spacer are on sidewalls silicon nitride layer used ion-implantation process. short-circuits between when doped areas annealed be transformed into desired junctions.