Shallow trench isolation (STI) and method of forming the same
作者： Kousuke Miyoshi
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摘要: A method of forming a shallow trench isolation, includes the steps, in sequence, (a) mask pattern on silicon substrate, being made dioxide layer and nitride layer, (b) substrate with used as mask, (c) first film covering an inner surface such that is not filled film, (d) heating (e) second over product resulted from step (f) (g) polishing films through use stopper, (h) etching for removal, (i) are level substrate.
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