A new synthesis reaction of Ti3SiC2 through pulse discharge sintering Ti/SiC/TiC powder
作者： Z.F Zhang , Z.M Sun , H Hashimoto , T Abe
DOI: 10.1016/S1359-6462(01)01184-8
关键词: Chemical synthesis 、 Atmospheric temperature range 、 Microstructure 、 Sintering 、 Pulse discharge sintering 、 Metallurgy 、 Materials science
摘要: Abstract Ti 3 SiC 2 was synthesized by pulse discharge sintering 4Ti/2SiC/TiC mixture powder in a temperature range of 1250–1450 °C. The purity improved to 92 vol% at 1350 microstructure the samples controlled be fine, coarse and duplex grains, depending on time.
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