Solid-state synthesis and characterization of the ternary phase Ti3SiC2

摘要: Ti3SiC2 is the only true ternary compound in Ti-Si-C system. It seems to exhibit promising thermal and mechanical behaviour. With exception of its layered crystal structure, most properties are unknown, owing great difficulty synthesis. A new procedure solid-state synthesis with several steps proposed, which results less than 5 at % TiC. stable least up 1300 °C. Beyond this temperature, it can decompose formation non-stoichiometric titanium carbide gaseous silicon, kinetics highly dependent on nature surroundings. As an example, graphite initiate process by reacting while alumina does not favour decomposition remains very slow. The oxidation under flowing oxygen starts 400 °C anatase-type TiO2 film, as studied TGA, XRD, SEM AES. Between 650 850 both rutile anatase formed, rapidly becoming protecting films giving rise slow SiO2 more TiO2. slower for TiC, a effect silica. By increasing processes (i.e. direct reaction diffusion through oxide layers) activated almost total achieved between 1050 1250 resulting titania (rutile) silica (cristobalite).