Magnetoresistance of SmMn2Ge2: A layered antiferromagnet.

摘要: The behavior of the magnetoresistance in ${\mathrm{SmMn}}_{2}$${\mathrm{Ge}}_{2}$\char21{}a layered intermetallic compound\char21{}is analogous to giant recently reported for artificial metallic multilayers. A moderate magnetic field (2\char21{}15 kOe) is sufficient switch ${\mathrm{SmMn}}_{2}$${\mathrm{Ge}}_{2}$ from antiferromagnetic (metamagnetic) state saturation, at a temperature \ensuremath{\sim}100 K, and this results resistance change 4\char21{}8 %. study spin-dependent scattering similar structures, which nature has conspired make essentially perfect interfaces, serves as complement structures.