On the impact of indium and boron on the Reversed Narrow-Channel Effect (RNCE) in BULK and SOI MOSFETs
作者： A. van Meer , Jeongho Lyu , S. Kubicek , S. de Meyer
关键词: Materials science 、 Diffusion (business) 、 Communication channel 、 MOSFET 、 Optoelectronics 、 Silicon on insulator 、 Dopant 、 Indium 、 Boron 、 Electronic engineering 、 Doping
摘要: For the first time, experimental results are presented on Reverse Narrow-Channel Effect (RNCE) in SOI and bulk MOSFETs using indium as a channel dopant. The show that devices with an exhibit same RNCE boron channel, which refers to diffusion mechanisms deep submicron devices.
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