Diffusion parameters of indium for silicon process modeling
作者： I. C. Kizilyalli , T. L. Rich , F. A. Stevie , C. S. Rafferty
DOI: 10.1063/1.363537
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摘要: The diffusion parameters of indium in silicon are investigated. Systematic experiments dry oxidizing ambients at temperatures ranging from 800 to 1050 °C conducted using wafers implanted with indium. Secondary‐ion‐mass spectrometry (SIMS) is used analyze the dopant distribution before and after heat treatment. oxidation‐enhanced parameter [R. B. Fair, Semiconductor Materials Process Technology Handbook, edited by G. E. McGuire (Noyes, Park Ridge, NJ, 1988); A. M. R. Lin, D. Antoniadis, W. Dutton, J. Electrochem. Soc. Solid‐State Sci. Technol. 128, 1131 (1981); Antoniadis I. Moskowitz, Appl. Phys. 53, 9214 (1982)] segregation coefficient Si/SiO2 interface Fair C. Tsai, 125, 2050 (1978)] (ratio concentration that dioxide) extracted as a function temperature SIMS depth profiles process simulator P...
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