Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics

摘要: Oxidation‐enhanced diffusion of phosphorus, arsenic, and boron oxidation‐reduced antimony in silicon have been studied as a function oxidation time. Data for the early phase dry oxygen from 5 to 60 min obtained. diffusivities show steady decrease with decreasing rate boron, enhancements at long times agreement previously reported results. Antimony shows reduction diffusivity during oxidation. A model allowing calculation enhancement or all elements has developed. The present data support theory dual vacancy‐interstitialcy mechanism studied. fraction interstitialcy fI calculated, yielding fI=0.38 phosphorus 1000 °C, fI=0.30 fI=0.35 arsenic 1090 °C, fI=0.015 1100 °C. It also shown that oxid...