Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures
作者： Rainer Schork , Peter Pichler , Heiner Ryssel , Thomas Klauser
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参考文章(1)
D. A. Antoniadis, I. Moskowitz, Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics Journal of Applied Physics. ,vol. 53, pp. 6788- 6796 ,(1982) , 10.1063/1.330067