Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in silicon
作者： T. Noda , S. Odanaka , H. Umimoto
DOI: 10.1063/1.1314304
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摘要: Transient enhanced diffusion of indium implanted in silicon is studied the presence end-of-range (EOR) damage layer. To investigate effect EOR defects on diffusion, samples that were with at a high dose (1×1013–5×1014/cm2) sufficient to produce amorphous layer prepared. Transmission electron microscopy measurements and Rutherford backscattering spectrometry reveal amorphization threshold implantation around 5×1013/cm2 for 200 keV, 115In+ 100 μA/cm2 beam current density room temperature. These results are consistent Monte Carlo simulation implantation. simulations indicate deviation from plus one model due mass indium. After amorphization, following both RTA 1000 °C furnace anneal low temperature (650 850 °C) nitrogen ambient showed formation extrinsic dislocation loops below original amorphous/crystalline interface. During this process, s...
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