Implant damage and diffusion behavior of indium in silicon-on-insulator
作者： P Chen , ZH An , RKY Fu , WL Liu , M Zhu
DOI: 10.1109/IWJT.2004.1306760
关键词: Rutherford backscattering spectrometry 、 Silicon 、 Secondary ion mass spectrometry 、 Indium 、 Ion implantation 、 Doping 、 Silicon on insulator 、 Materials science 、 Surface diffusion 、 Analytical chemistry
摘要: Ion implant damage and diffusion behavior of indium implanted into the separation by implantation oxygen (SIMOX) silicon-on-insulator (SOI) substrates at different energies doses are studied. Rutherford backscattering spectrometry in channeling mode (RBS/C) secondary ion mass (SIMS) used to characterize our samples. After relatively high-dose (1/spl times/10/sup 14/ cm/sup -2/ 200 kV), a completely amorphized layer is formed which can be almost entirely repaired subsequent annealing. At low energy dose implantation, profiles similar with those bulk silicon substrates. However, under highest-dose condition -2/), buried interface SOI, acts as an recombination center point defects, notably affect profile trapping atoms defects thus leaving steep top layer.
sci-hub.se 参考文章(8)
T. Noda, S. Odanaka, H. Umimoto, Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in silicon Journal of Applied Physics. ,vol. 88, pp. 4980- 4984 ,(2000) , 10.1063/1.1314304
S. Solmi, A. Parisini, M. Bersani, D. Giubertoni, V. Soncini, G. Carnevale, A. Benvenuti, A. Marmiroli, Investigation on indium diffusion in silicon Journal of Applied Physics. ,vol. 92, pp. 1361- 1366 ,(2002) , 10.1063/1.1492861
P. B. Griffin, M. Cao, P. Vande Voorde, Y.-L. Chang, W. M. Greene, Indium transient enhanced diffusion Applied Physics Letters. ,vol. 73, pp. 2986- 2988 ,(1998) , 10.1063/1.122652
G.F. Cerofolini, F. Corni, G. Ottaviani, R. Tonini, A fast technique for the quantitative analysis of channeling RBS spectra Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 71, pp. 441- 444 ,(1992) , 10.1016/0168-583X(92)95362-U
R. H. Yan, A. Ourmazd, K. F. Lee, D. Y. Jeon, C. S. Rafferty, M. R. Pinto, Scaling the Si metal‐oxide‐semiconductor field‐effect transistor into the 0.1‐μm regime using vertical doping engineering Applied Physics Letters. ,vol. 59, pp. 3315- 3317 ,(1991) , 10.1063/1.105717
S. W. Crowder, C. J. Hsieh, P. B. Griffin, J. D. Plummer, Effect of buried Si‐SiO2 interfaces on oxidation and implant‐enhanced dopant diffusion in thin silicon‐on‐insulator films Journal of Applied Physics. ,vol. 76, pp. 2756- 2764 ,(1994) , 10.1063/1.357539
Y. Mii, S. Rishton, Y. Taur, D. Kern, T. Lii, K. Lee, K.A. Jenkins, D. Quinlan, T. Brown, D. Danner, F. Sewell, M. Polcari, Experimental high performance sub-0.1 /spl mu/m channel nMOSFET's IEEE Electron Device Letters. ,vol. 15, pp. 28- 30 ,(1994) , 10.1109/55.289472
H. Liao, D.S. Ang, C.H. Ling, A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment IEEE Transactions on Electron Devices. ,vol. 49, pp. 2254- 2262 ,(2002) , 10.1109/TED.2002.805610