Thermodynamic and kinetic properties of indium-implanted silicon I: Moderate temperature recovery of the implant damage and metastability effects
作者： G.F. Cerofolini , G. Ferla , G.U. Pignatel , F. Riva , G. Ottaviani
DOI: 10.1016/0040-6090(83)90253-5
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摘要: Abstract Rutherford backscattering analysis and junction depth sheet conductivity measurements were used to investigate the recrystallization of indium-implanted Si(100) substrates their electrical behaviour after annealings up 800 °C. The data show an initial fast recovery implant damage a high anomalous indium diffusivity. A strong correlation between substitutionality is found. observed decrease with increasing annealing temperature attributed loss by indium.
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