The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes
作者： Hyung Jun Cho , Sung Uk Lee , Byungyou Hong , Yong Deok Shin , Jin Young Ju
DOI: 10.1016/J.TSF.2009.10.130
关键词: Transmittance 、 Analytical chemistry 、 Physical vapor deposition 、 Sputter deposition 、 Materials science 、 Mineralogy 、 Thin film 、 Scherrer equation 、 Annealing (metallurgy) 、 Field electron emission 、 Scanning electron microscope
摘要: Abstract In this study, transparent conducting Al-doped zinc oxide (AZO) films with a thickness of 150 nm were prepared on Corning glass substrates by the RF magnetron sputtering using ZnO:Al (Al2O3: 2 wt.%) target at room temperature. This study investigated effects post-annealing temperature and annealing ambient structural, electrical optical properties AZO films. The annealed temperatures ranging from 300 to 500 °C in steps 100 °C rapid thermal equipment oxygen. thicknesses observed field emission scanning electron microscopy (FE-SEM); their grain size was calculated X-ray diffraction (XRD) spectra Scherrer equation. XRD measurements showed be crystallized strong (002) orientation as substrate increases over 300 °C. Their Hall measurement transmittance measured UV–vis spectrometry. film oxygen an resistivity 2.24 × 10− 3 Ω cm very high 93.5% which decreased about one order increased 9.4%, respectively, compared as-deposited film.
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