作者: Ki Hwan Kim , Maryane Putri , Chang Young Koo , Jung-A Lee , Jeong-Joo Kim
DOI: 10.4313/JKEM.2013.26.8.591
关键词: Analytical chemistry 、 Sputter deposition 、 Substrate (electronics) 、 Indium tin oxide 、 Ion 、 Materials science 、 Thin film 、 Oxide 、 Electrical resistivity and conductivity 、 Indium
摘要: Indium Zinc Tin Oxide (IZTO) thin films were developed as an alternative to (ITO) films. ITO material which has been acknowledged with its low resistivity and optical transparency of 85-90% used major transparent conducting oxide (TCO) materials. However, due the limited source, high price, instability problems at temperature indium, many researches focused on indium-saving TCO Mason Group Northwestern University was reported expand solubility limit up 40% by co-doping 1:1 ratio Zn +2 Sn +4 ions. In this study, properties IZTO corresponding Zn/Sn different investigated. addition, effect substrate variable structural, electrical