The Effect of Zn/Sn Different Raito of InZnSnO Thin Films Prepared by RF Magnetron Sputtering

作者: Ki Hwan Kim , Maryane Putri , Chang Young Koo , Jung-A Lee , Jeong-Joo Kim

DOI: 10.4313/JKEM.2013.26.8.591

关键词: Analytical chemistrySputter depositionSubstrate (electronics)Indium tin oxideIonMaterials scienceThin filmOxideElectrical resistivity and conductivityIndium

摘要: Indium Zinc Tin Oxide (IZTO) thin films were developed as an alternative to (ITO) films. ITO material which has been acknowledged with its low resistivity and optical transparency of 85-90% used major transparent conducting oxide (TCO) materials. However, due the limited source, high price, instability problems at temperature indium, many researches focused on indium-saving TCO Mason Group Northwestern University was reported expand solubility limit up 40% by co-doping 1:1 ratio Zn +2 Sn +4 ions. In this study, properties IZTO corresponding Zn/Sn different investigated. addition, effect substrate variable structural, electrical

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