Influence of RF power on the growth mechanism, preferential orientation and optoelectronic properties of nanocrystalline ITO films

摘要: Abstract Nanocrystalline ITO thin films were deposited by the RF sputtering technique using various power values keeping substrates at room temperature. An indepth study of influence on preferential orientation, optical, electrical and surface morphological properties was conducted varying from 50 W to a maximum 350 W. X-ray diffraction results confirmed formation nanocrystalline all values. At 250 W, showed orientation along (400) plane. Below above this power, (222) orientation. It observed optical transmittance studies that bandgap value increased 3.55 3.70 eV when varied 50 250 W. The resistivity minimum 4.2 × 10 −3  Ω cm grain size reached 125 nm for film XPS, EDAX AFM revealed stoichiometric smooth films, which contained nano-sized grains distributed uniformly over surface. These show with 250 W under optimized conditions temperature, have required optoelectronic useful fabrication devices relatively lower