The electrical and optical properties of indium zinc tin oxide thin films with different Sn/Zn ratio
作者： Damisih , Hong Chan Ma , Jeong-Joo Kim , Hee Young Lee
DOI: 10.1016/J.TSF.2011.10.064
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摘要: Abstract Indium zinc tin oxide (IZTO) thin films with two different chemical compositions, i.e. IZTO15 and IZTO25, where In content was fixed at 60 at.% Sn 15 25 at.%, respectively, were deposited onto alkaline-free glass substrate temperature from 37 °C to 600 °C. The deposition process carried out in argon using an RF magnetron sputter. After deposition, the annealed atmosphere 450 °C for 30 min. effect of annealing treatment investigated, minimum resistivity value 3.44 × 10 − 4 Ω.cm obtained film 400 °C IZTO25 target followed by rapid thermal average optical transmittance kept fairly high over 80%. It proven that both important parameters lowering electrical without deteriorating properties.
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