Resonance Energy Transfer in Hybrid Devices in the Presence of a Surface
作者： Oleksii Kopylov , Alexander Huck , Shima Kadkhodazadeh , Kresten Yvind , Beata Kardynal
DOI: 10.1021/JP5049327
关键词: Dry etching 、 Surface states 、 Wafer 、 Resonant inductive coupling 、 Recombination 、 Resonance 、 Optoelectronics 、 Materials science 、 Nanocrystal 、 Quantum well
摘要: We have studied room-temperature, nonradiative resonant energy transfer from InGaN/GaN quantum wells to CdSe/ZnS nanocrystals separated by aluminum oxide layers of different thicknesses. Nonradiative the at separation distances up approximately 10 nm was observed. By comparing carrier dynamics and nanocrystals, we found that recombination via surface states, generated during dry etching wafer, counteracts energy-transfer process therefore decreases efficiency.
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