Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si

摘要: Annealing of aluminum/amorphous silicon bilayers below the eutectic temperature aluminum/silicon system leads to an exchange layer positions and a concurrent crystallization (aluminum-induced exchange). This letter discusses model for self-limited suppression nucleation during process. characteristic feature is reason why large grain sizes can be obtained. In our experiments, we combine caused by supersaturation undercooling. Si depletion regions around existing grains are made visible. These experiments give direct proof idea that occurs in aluminum-induced