Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition
作者： Li Jun-Shuai , Wang Jin-Xiao , Yin Min , Gao Ping-Qi , He De-Yan
DOI: 10.1088/0256-307X/23/12/060
关键词:
摘要: Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low 350°C. Compared to the traditional annealing crystallization of amorphous Si/Al-layer structures, no layer exchange is observed and resultant poly-Si film much thicker than Al layer. By analysing depth profiles elemental composition, remains atoms detected within limit (<0.01 at.%) used evaluations. It indicated that material obtained Al-induced growth has more potential applications prepared structures.
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